RGPR10BM40FHTL
RGPR10BM40FHTL
Артикул:
Описание:
RGPR10BM40FHTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
460 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
20 A
Power Dispation
107 W
Описание
Insulated-gate bipolar transistor-RGPR10BM40FHTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
460 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
20 A
Power Dispation
107 W
Описание
Insulated-gate bipolar transistor-RGPR10BM40FHTL: Биполярный транзистор с изолированным затвором