RGPR30BM40HRTL
RGPR30BM40HRTL
Артикул:
Описание:
RGPR30BM40HRTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
430 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
30 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-RGPR30BM40HRTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
430 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
30 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-RGPR30BM40HRTL: Биполярный транзистор с изолированным затвором