История:
BD5.1/0.8/4-4S2
LC4064ZC-5MN56C
VS-ST330C14L1
RGPZ10BM40FHTL
RGPZ10BM40FHTL
Артикул:
Описание:
RGPZ10BM40FHTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
460 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
20 A
Power Dispation
107 W
Описание
Insulated-gate bipolar transistor-RGPZ10BM40FHTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
460 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
20 A
Power Dispation
107 W
Описание
Insulated-gate bipolar transistor-RGPZ10BM40FHTL: Биполярный транзистор с изолированным затвором

