RGS60TS65DHRC11
RGS60TS65DHRC11
Артикул:
RGS60TS65DHRC11
Описание:
RGS60TS65DHRC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
56 A
Power Dispation
223 W
Описание
Insulated-gate bipolar transistor-RGS60TS65DHRC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
56 A
Power Dispation
223 W
Описание
Insulated-gate bipolar transistor-RGS60TS65DHRC11: Биполярный транзистор с изолированным затвором