RGS80TSX2DHRC11
RGS80TSX2DHRC11
Артикул:
Описание:
RGS80TSX2DHRC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Power Dispation
555 W
Описание
Insulated-gate bipolar transistor-RGS80TSX2DHRC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
30 V
Power Dispation
555 W
Описание
Insulated-gate bipolar transistor-RGS80TSX2DHRC11: Биполярный транзистор с изолированным затвором