История:
P2703ACMCLRP
E64/10/50-3C92-A630-E
RGT30NL65DGTL
RGT30NL65DGTL
Артикул:
RGT30NL65DGTL
Описание:
RGT30NL65DGTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
133 W
Описание
Insulated-gate bipolar transistor-RGT30NL65DGTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
133 W
Описание
Insulated-gate bipolar transistor-RGT30NL65DGTL: Биполярный транзистор с изолированным затвором

