RGT30NS65DGTL
RGT30NS65DGTL
Артикул:
RGT30NS65DGTL
Описание:
RGT30NS65DGTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
133 W
Описание
Insulated-gate bipolar transistor-RGT30NS65DGTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
30 A
Power Dispation
133 W
Описание
Insulated-gate bipolar transistor-RGT30NS65DGTL: Биполярный транзистор с изолированным затвором