История:
MS32 0R536
T3401N33TOFS20XPSA1
RGT8BM65DTL
RGT8BM65DTL
Артикул:
Описание:
RGT8BM65DTL
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
8 A
Power Dispation
62 W
Описание
Insulated-gate bipolar transistor-RGT8BM65DTL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
8 A
Power Dispation
62 W
Описание
Insulated-gate bipolar transistor-RGT8BM65DTL: Биполярный транзистор с изолированным затвором

