RGT8NS65DGC9
RGT8NS65DGC9
Артикул:
RGT8NS65DGC9
Описание:
RGT8NS65DGC9
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
8A
Power Dispation
65 W
Описание
Insulated-gate bipolar transistor-RGT8NS65DGC9: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
8A
Power Dispation
65 W
Описание
Insulated-gate bipolar transistor-RGT8NS65DGC9: Биполярный транзистор с изолированным затвором