RGTH50TS65DGC11
RGTH50TS65DGC11
Артикул:
RGTH50TS65DGC11
Описание:
RGTH50TS65DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
50 A
Power Dispation
174 W
Описание
Insulated-gate bipolar transistor-RGTH50TS65DGC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
50 A
Power Dispation
174 W
Описание
Insulated-gate bipolar transistor-RGTH50TS65DGC11: Биполярный транзистор с изолированным затвором