RGTH60TS65DGC11
RGTH60TS65DGC11
Артикул:
RGTH60TS65DGC11
Описание:
RGTH60TS65DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
58 A
Power Dispation
194 W
Описание
Insulated-gate bipolar transistor-RGTH60TS65DGC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
58 A
Power Dispation
194 W
Описание
Insulated-gate bipolar transistor-RGTH60TS65DGC11: Биполярный транзистор с изолированным затвором