RGTV00TS65GC11
RGTV00TS65GC11
Артикул:
RGTV00TS65GC11
Описание:
RGTV00TS65GC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
95 A
Power Dispation
276 W
Описание
Insulated-gate bipolar transistor-RGTV00TS65GC11: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
95 A
Power Dispation
276 W
Описание
Insulated-gate bipolar transistor-RGTV00TS65GC11: Биполярный транзистор с изолированным затвором