История:
STGF4M65DF2
RGTVX6TS65GC11
RGTVX6TS65GC11
Артикул:
RGTVX6TS65GC11
Описание:
RGTVX6TS65GC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
144 A
Power Dispation
404 W
Описание
Insulated-gate bipolar transistor-RGTVX6TS65GC11: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
144 A
Power Dispation
404 W
Описание
Insulated-gate bipolar transistor-RGTVX6TS65GC11: Биполярный транзистор с изолированным затвором

