RGW00TS65DGC11
RGW00TS65DGC11
Артикул:
RGW00TS65DGC11
Описание:
RGW00TS65DGC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-RGW00TS65DGC11: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-RGW00TS65DGC11: Биполярный транзистор с изолированным затвором