История:
P2600ECLAP
P2600ECMCL
RGW00TS65GC11
RGW00TS65GC11
Артикул:
RGW00TS65GC11
Описание:
RGW00TS65GC11
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-RGW00TS65GC11: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ROHM Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
96 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-RGW00TS65GC11: Биполярный транзистор с изолированным затвором

