История:
2EDGVM-7.5-04P
SGF23N60UFTU
SGF23N60UFTU
Артикул:
SGF23N60UFTU
Описание:
SGF23N60UFTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-SGF23N60UFTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-SGF23N60UFTU: Биполярный транзистор с изолированным затвором

