История:
2EDGVM-7.5-04P
SGF5N150UFTU
SGF5N150UFTU
Артикул:
SGF5N150UFTU
Описание:
SGF5N150UFTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1500 V
Collector-Emitter Saturation Voltage
4.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-SGF5N150UFTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1500 V
Collector-Emitter Saturation Voltage
4.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-SGF5N150UFTU: Биполярный транзистор с изолированным затвором

