История:
LM293DGKRG4
LM311DRG4
STGP30H60DF
STGWA40H65DFB2
SGH20N60RUFDTU
SGH20N60RUFDTU
Артикул:
SGH20N60RUFDTU
Описание:
SGH20N60RUFDTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
195 W
Описание
Insulated-gate bipolar transistor-SGH20N60RUFDTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
195 W
Описание
Insulated-gate bipolar transistor-SGH20N60RUFDTU: Биполярный транзистор с изолированным затвором

