История:
LM293DGKRG4
LM311DRG4
STGP30H60DF
STGWA40H65DFB2
SGH40N60UFTU
SGH40N60UFTU
Артикул:
SGH40N60UFTU
Описание:
SGH40N60UFTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-SGH40N60UFTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-SGH40N60UFTU: Биполярный транзистор с изолированным затвором

