История:
LS1023ASN7KQB
PM-M12B-05P-FF-SR8D01
P2600ECLRP1
TR2/C515-4-R
PM-M12D-04P-MM-SL8D01
PM-M12A-03P-MM-SR8D01
SPD2-PV11-3P0-R
TR2/C515-3-R
APTGT50DDA120T3G
LS1020AXE7KQB
LS1021AXN7KQB
LS1023ASN7PQB
2EDGKLM-7.62-02P
PM-M12B-05P-MM-SL8A01
LM319MX/NOPB
PM-M12B-05P-MM-SR8A01
SD-M12A-04P-MM-SH8A50
SD-M12D-04P-FF-SH8002
SGP02N120
SGP02N120
Артикул:
SGP02N120
Описание:
SGP02N120
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20 V
Описание
Insulated-gate bipolar transistor-SGP02N120: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20 V
Описание
Insulated-gate bipolar transistor-SGP02N120: Биполярный транзистор с изолированным затвором