SGP10N60RUFDTU
SGP10N60RUFDTU
Артикул:
SGP10N60RUFDTU
Описание:
SGP10N60RUFDTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-SGP10N60RUFDTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-SGP10N60RUFDTU: Биполярный транзистор с изолированным затвором