SGP23N60UFTU
SGP23N60UFTU
Артикул:
SGP23N60UFTU
Описание:
SGP23N60UFTU
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-SGP23N60UFTU: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
23 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-SGP23N60UFTU: Биполярный транзистор с изолированным затвором