История:
8EDGVC-3.5-02P
2EDGVM-7.5-04P
STGB10H60DF
STGB10H60DF
Артикул:
STGB10H60DF
Описание:
STGB10H60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGB10H60DF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGB10H60DF: Биполярный транзистор с изолированным затвором

