STGB10NB40LZT4
STGB10NB40LZT4
Артикул:
Описание:
STGB10NB40LZT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.8 V
Collector-Emitter Saturation Voltage
1.2 V
Maximum Gate Emitter Voltage
12 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-STGB10NB40LZT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1.8 V
Collector-Emitter Saturation Voltage
1.2 V
Maximum Gate Emitter Voltage
12 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-STGB10NB40LZT4: Биполярный транзистор с изолированным затвором