STGB20NB41LZT4
STGB20NB41LZT4
Артикул:
STGB20NB41LZT4
Описание:
STGB20NB41LZT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
20 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
12 V
Continuous Collector Current at 25 C
40 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-STGB20NB41LZT4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
20 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
12 V
Continuous Collector Current at 25 C
40 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-STGB20NB41LZT4: Биполярный транзистор с изолированным затвором