STGB25N40LZAG
STGB25N40LZAG
Артикул:
Описание:
STGB25N40LZAG
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
16 V
Continuous Collector Current at 25 C
25 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-STGB25N40LZAG: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
16 V
Continuous Collector Current at 25 C
25 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-STGB25N40LZAG: Биполярный транзистор с изолированным затвором