История:
STGF6M65DF2
S16B-SMH-1L.M-2M32-PC
STGB30H60DLLFBAG
STGB30H60DLLFBAG
Артикул:
STGB30H60DLLFBAG
Описание:
STGB30H60DLLFBAG
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGB30H60DLLFBAG: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
260 W
Описание
Insulated-gate bipolar transistor-STGB30H60DLLFBAG: Биполярный транзистор с изолированным затвором

