STGB30V60DF
STGB30V60DF
Артикул:
STGB30V60DF
Описание:
STGB30V60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
258 W
Описание
Insulated-gate bipolar transistor-STGB30V60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
258 W
Описание
Insulated-gate bipolar transistor-STGB30V60DF: Биполярный транзистор с изолированным затвором