STGB3NC120HDT4
STGB3NC120HDT4
Артикул:
Описание:
STGB3NC120HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-STGB3NC120HDT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-STGB3NC120HDT4: Биполярный транзистор с изолированным затвором