История:
STGF6M65DF2
S16B-SMH-1L.M-2M32-PC
STGB3NC120HDT4
STGB3NC120HDT4
Артикул:
STGB3NC120HDT4
Описание:
STGB3NC120HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-STGB3NC120HDT4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-STGB3NC120HDT4: Биполярный транзистор с изолированным затвором

