STGB40V60F
STGB40V60F
Артикул:
STGB40V60F
Описание:
STGB40V60F
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGB40V60F: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
283 W
Описание
Insulated-gate bipolar transistor-STGB40V60F: Биполярный транзистор с изолированным затвором