STGB6NC60HDT4
STGB6NC60HDT4
Артикул:
Описание:
STGB6NC60HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Power Dispation
80 W
Описание
Insulated-gate bipolar transistor-STGB6NC60HDT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Power Dispation
80 W
Описание
Insulated-gate bipolar transistor-STGB6NC60HDT4: Биполярный транзистор с изолированным затвором