STGB7NC60HDT4
STGB7NC60HDT4
Артикул:
Описание:
STGB7NC60HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGB7NC60HDT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGB7NC60HDT4: Биполярный транзистор с изолированным затвором