STGD10HF60KD
STGD10HF60KD
Артикул:
STGD10HF60KD
Описание:
STGD10HF60KD
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-STGD10HF60KD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-STGD10HF60KD: Биполярный транзистор с изолированным затвором