STGD3HF60HDT4
STGD3HF60HDT4
Артикул:
STGD3HF60HDT4
Описание:
STGD3HF60HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
7.5 A
Power Dispation
38 W
Описание
Insulated-gate bipolar transistor-STGD3HF60HDT4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
7.5 A
Power Dispation
38 W
Описание
Insulated-gate bipolar transistor-STGD3HF60HDT4: Биполярный транзистор с изолированным затвором