STGD3NB60SDT4
STGD3NB60SDT4
Артикул:
Описание:
STGD3NB60SDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
48 W
Описание
Insulated-gate bipolar transistor-STGD3NB60SDT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
48 W
Описание
Insulated-gate bipolar transistor-STGD3NB60SDT4: Биполярный транзистор с изолированным затвором