STGD5NB120SZT4
STGD5NB120SZT4
Артикул:
STGD5NB120SZT4
Описание:
STGD5NB120SZT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
55 W
Описание
Insulated-gate bipolar transistor-STGD5NB120SZT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
55 W
Описание
Insulated-gate bipolar transistor-STGD5NB120SZT4: Биполярный транзистор с изолированным затвором