STGD6NC60H-1
STGD6NC60H-1
Артикул:
STGD6NC60H-1
Описание:
STGD6NC60H-1
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-STGD6NC60H-1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
62.5 W
Описание
Insulated-gate bipolar transistor-STGD6NC60H-1: Биполярный транзистор с изолированным затвором