STGD6NC60HDT4
STGD6NC60HDT4
Артикул:
Описание:
STGD6NC60HDT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Power Dispation
50 W
Описание
Insulated-gate bipolar transistor-STGD6NC60HDT4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Power Dispation
50 W
Описание
Insulated-gate bipolar transistor-STGD6NC60HDT4: Биполярный транзистор с изолированным затвором