STGD7NB60ST4
STGD7NB60ST4
Артикул:
STGD7NB60ST4
Описание:
STGD7NB60ST4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
55 W
Описание
Insulated-gate bipolar transistor-STGD7NB60ST4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
55 W
Описание
Insulated-gate bipolar transistor-STGD7NB60ST4: Биполярный транзистор с изолированным затвором