История:
TNETV2685FIBZUTA7
STGD7NC60HT4
STGD7NC60HT4
Артикул:
STGD7NC60HT4
Описание:
STGD7NC60HT4
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
25 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-STGD7NC60HT4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
25 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-STGD7NC60HT4: Биполярный транзистор с изолированным затвором

