STGF10NB60SD
STGF10NB60SD
Артикул:
Описание:
STGF10NB60SD
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGF10NB60SD: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGF10NB60SD: Биполярный транзистор с изолированным затвором