STGF19NC60KD
STGF19NC60KD
Артикул:
STGF19NC60KD
Описание:
STGF19NC60KD
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
35 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-STGF19NC60KD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
35 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-STGF19NC60KD: Биполярный транзистор с изолированным затвором