STGF7NB60SL
STGF7NB60SL
Артикул:
Описание:
STGF7NB60SL
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGF7NB60SL: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
25 W
Описание
Insulated-gate bipolar transistor-STGF7NB60SL: Биполярный транзистор с изолированным затвором