STGFW20V60DF
STGFW20V60DF
Артикул:
STGFW20V60DF
Описание:
STGFW20V60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
52 W
Описание
Insulated-gate bipolar transistor-STGFW20V60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
52 W
Описание
Insulated-gate bipolar transistor-STGFW20V60DF: Биполярный транзистор с изолированным затвором