STGFW80V60F
STGFW80V60F
Артикул:
STGFW80V60F
Описание:
STGFW80V60F
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
79 W
Описание
Insulated-gate bipolar transistor-STGFW80V60F: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
79 W
Описание
Insulated-gate bipolar transistor-STGFW80V60F: Биполярный транзистор с изолированным затвором