STGP10H60DF
STGP10H60DF
Артикул:
STGP10H60DF
Описание:
STGP10H60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGP10H60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
115 W
Описание
Insulated-gate bipolar transistor-STGP10H60DF: Биполярный транзистор с изолированным затвором