STGP10NB60S
STGP10NB60S
Артикул:
STGP10NB60S
Описание:
STGP10NB60S
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
80 W
Описание
Insulated-gate bipolar transistor-STGP10NB60S: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
80 W
Описание
Insulated-gate bipolar transistor-STGP10NB60S: Биполярный транзистор с изолированным затвором