STGP4M65DF2
STGP4M65DF2
Артикул:
STGP4M65DF2
Описание:
STGP4M65DF2
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
8 A
Power Dispation
68 W
Описание
Insulated-gate bipolar transistor-STGP4M65DF2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
8 A
Power Dispation
68 W
Описание
Insulated-gate bipolar transistor-STGP4M65DF2: Биполярный транзистор с изолированным затвором