STGP7H60DF
STGP7H60DF
Артикул:
STGP7H60DF
Описание:
STGP7H60DF
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
88 W
Описание
Insulated-gate bipolar transistor-STGP7H60DF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
88 W
Описание
Insulated-gate bipolar transistor-STGP7H60DF: Биполярный транзистор с изолированным затвором