STGP8M120DF3
STGP8M120DF3
Артикул:
STGP8M120DF3
Описание:
STGP8M120DF3
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGP8M120DF3: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
STMicroelectronics
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
167 W
Описание
Insulated-gate bipolar transistor-STGP8M120DF3: Биполярный транзистор с изолированным затвором